Graphite based Schottky diodes on Si, GaAs, and 4H-SiC
نویسندگان
چکیده
Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closely follow the Schottky-Mott relation. Due to the properties of graphite and Schottky junctions, the graphite/semiconductor junction is a good predictor of a graphene/semiconductor junction. Also, the graphite/semiconductor Schottky diode is extremely applicable to high power, frequency, and temperature devices.
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